unisonic technologies co., ltd MJE13009-P npn silicon transistor www.unisonic.com.tw 1 of 9 copyright ? 2013 unisonic technologies co., ltd qw-r223-008, a switchmode series npn silicon power transistors ? description the MJE13009-P is designed for high-voltage, high-speed power switching inductive circuits where fall time is critical. they are particularly suited for 115 and 220v switch mode applications such as switching regulators, inverters, motor controls, solenoid/relay drivers and deflection circuits. ? features * v ceo 400v and 300 v * reverse bias soa with inductive loads @ t c = 100c * inductive switching matrix 3 ~ 12 amp, 25 and 100c t c @ 8 a, 100c is 120 ns (typ). * 700 v blocking capability * soa and switching applications information. ? ordering information ordering number package pin assignment packing lead free halogen free 1 2 3 mje13009l-p-t3p-t mje13009g-p-t3p-t to-3p b c e tube mje13009l-p-ta3-t mje13009g-p-ta3-t to-220 b c e tube
MJE13009-P npn silicon transistor unisonic technologies co., ltd 2 of 9 www.unisonic.com.tw qw-r223-008, a ? absolute maximum ratings (t a = 25c) parameter symbol ratings unit collector-emitter voltage v ceo 400 v collector-emitter voltage (v be =-1.5v) v cev 700 v emitter base voltage v ebo 9 v collector current continuous i c 12 a peak (note 3) i cm 24 base current continuous i b 6 a peak (note 3) i bm 12 emitter current continuous i e 18 a peak (note 3) i em 36 power dissipation to-220 p d 2 w to-3p 80 derate above 25c to-220 16 mw/c to-3p 640 junction temperature t j +150 c storage temperature t stg -40 ~ +150 c note: 1. pulse test: pulse width = 5ms, duty cycle 10% 2. absolute maximum ratings are those values beyond which the device could be permanently damaged. absolute maximum ratings are stress ratings only and functional device operation is not implied. 3. pulse test: pulse width = 300s, duty cycle = 2% ? thermal data parameter symbol ratings unit junction to ambient to-220 ja 54 c/w to-3p 21 junction to case to-220 jc 4 c/w to-3p 1.55 ? electrical characteristics (t c = 25c, unless otherwise specified.) parameter symbol test conditions min typ max unit off characteristics (note) collector- emitter sustaining voltage v ceo i c = 10ma, i b = 0 400 v collector cutoff current v cbo =rated value i cev v be(off) = 1.5v dc v be ( off ) = 1.5v dc , t c = 100c 1 5 ma emitter cutoff current i ebo v eb = 9v dc , i c = 0 1 ma on characteristics (note) dc current gain h fe1 i c = 5a, v ce = 5v 40 h fe 2 i c = 8a, v ce = 5v 30 current-emitter saturation voltage v ce(sat) i c = 5a, i b = 1a 1 v i c = 8a, i b = 1.6a 1.5 v i c = 12a, i b = 3a 3 v i c = 8a, i b = 1.6a, t c = 100c 2 v base-emitter satura tion voltage v be(sat) i c = 5a, i b = 1a 1.2 v i c = 8a, i b = 1.6a 1.6 v i c = 8a, i b = 1.6a, t c = 100c 1.5 v
MJE13009-P npn silicon transistor unisonic technologies co., ltd 3 of 9 www.unisonic.com.tw qw-r223-008, a ? electrical characteristics(cont.) parameter symbol test conditions min typ max unit dynamic characteristics transition frequency f t i c = 500ma, v ce = 10v, f = 1mhz 4 mhz output capacitance c ob v cb = 10v, i e = 0, f = 0.1mhz 180 pf switching characteristics (resistive load, table 1) delay time t dly v cc = 125vdc, i c = 8a i b1 = i b2 = 1.6a, t p = 25 s duty cycle 1% 0.06 0.1 s rise time t r 0.45 1 s storage time t s 1.3 3 s fall time t f 0.2 0.7 s inductive load, clamped (table 1, fig. 13) voltage storage time t s i c =8a, v clamp =300v, i b1 =1.6a v be(off) = 5v, t c = 100c 0.92 2.3 s crossover time t c 0.12 0.7 s note: pulse test: pulse wieth = 300s, duty cycle = 2%
MJE13009-P npn silicon transistor unisonic technologies co., ltd 4 of 9 www.unisonic.com.tw qw-r223-008, a ? table 1. test conditions for dynamic performance reverse bias safe operating area and i nductive switching r esistive switching test circuits 0.02 f note: p w and v cc adjusted for desired i c r b adjusted for desired i b1 duty cycle 10% t r , t f 10 ns 270 47 1/2w 100 2n2905 mje200 -v be(off) d.u.t. i b r b i c mje210 2n2222 1n4933 33 +5v 33 1n4933 0.001 f 1k 1k 68 +5v 1k 1n4933 5v p w l v cc mr826* v clamp *selected for . 1 kv 5.1k 51 v ce circuit values coil data: ferroxcube core #6656 gap for 200 h/20a v cc = 20v full bobbin (~16 turns) #16 l coil = 200 h v clamp = 300v dc v cc = 125v r c = 15 ? d1 = 1n5820 or equiv. r b = ? test waveforms t r , t f < 10 ns duty cycle = 1.0% r b and r c adjusted for desired i b and i c +10v 25s 0 -8v
MJE13009-P npn silicon transistor unisonic technologies co., ltd 5 of 9 www.unisonic.com.tw qw-r223-008, a ? table 2. applications examples of switching circuits circuit load line diag rams time diagrams series switching regulator v cc v out 2 1 1 turn?off (reverse bias) soa 1.5 v v be(off) 9.0 v duty cycle 10% turn?on (forward bias) soa t on 10 ms duty cycle 10% p d = 4000 w 350v 700v 400v v cc collector voltage turn?off turn?on t c = 100c 12a 24a + v cc v out n ringing choke inverter t c = 100 c 12a 24a v cc + 1 1 700v 400v collector voltage 350v 2 p d = 4000 w turn?on (forward bias) soa t on 10 ms duty cycle 10% turn?off (reverse bias) soa 1.5 v v be(off) 9.0 v duty cycle 10% turn?on turn?off v cc +n(v out) t i c v ce v cc v cc + n(v o ) t on t off leakage spike t v cc v out push?pull inverter/converter
MJE13009-P npn silicon transistor unisonic technologies co., ltd 6 of 9 www.unisonic.com.tw qw-r223-008, a ? table 3. typical inductive switching performance i c (a) t c (c) t sv (ns) t rv (ns) t fi (ns) t ti (ns) t c (ns) 3 25 100 770 1000 100 230 150 160 200 200 240 320 5 25 100 630 820 72 100 26 55 10 30 100 180 8 25 100 720 920 55 70 27 50 2 8 77 120 12 25 100 640 800 20 32 17 24 2 4 41 54 ? switching time notes in resistive switching circuits, rise, fall, and stor age times have been defined and apply to both current and voltage waveforms since they are in phase. however, for inductive loads which are common to switchmode power supplies and hammer drivers, current and voltage waveforms are not in phas e. therefore, separate measurements must be made on each wavefo rm to determine the total switching time. for this reason, the following new terms have been defined. t sv = voltage storage time, 90% i b1 to 10% v cem t rv = voltage rise time, 10?90% v cem t fi = current fall time, 90?10% i cm t ti = current tail, 10?2% i cm t c = crossover time, 10% v cem to 10% i cm an enlarged portion of the turn?off waveforms is shown in fig. 13 to aid in the visual identity of these terms. for the designer, there is minimal switching loss duri ng storage time and the predominant switching power losses occur during the crossover interval and can be obtained using the standard equation from an?222: p swt = 1/2 v cc i c (t c ) f typical inductive switching waveforms are shown in fig. 14. in general, t rv + t fi t c . however, at lower test currents this relationship may not be valid. as is common with most switching transistors, resi stive switching is specifie d at 25c and has become a benchmark for designers. however, for designers of high frequency converter circuits, the user oriented specifications which make this a ?switchmode? transistor are the inductive switching speeds (t c and t sv ) which are guaranteed at 100c.
MJE13009-P npn silicon transistor unisonic technologies co., ltd 7 of 9 www.unisonic.com.tw qw-r223-008, a ? typical charateristics collector current, i c (a) collector, i c (a) 160 fig. 3 forward bias power derating 0 0.6 power derating factor case temperature, t c (c) 140 20 40 100 0.4 80 0.8 thermal derating second breakdown derating 60 120 1 0.2 there are two limitations on the power handling ability of a transistor: average junction temperature and second breakdown. safe operating area curves indicate i c -v ce limits of the transistor that must be observed for reliable operation; i.e., the transistor must not be subjected to greater dissipation than the curves indicate. the data of fig. 1 is based on t c =25c; t j(pk) is variable depending on power level. second breakdown pulse limits are valid for duty cycles to 10% but must be derated when t c 25c. second breakdown limitations do not derate the same as thermal limitations. allowable current at the voltages shown on fig. 1 may be found at any case temperature by using the appropriate curve on fig. 3. t j(pk) may be calculated from the data in fig. 4. at high case temperatures, thermal limitations will reduce the power that can be handled to values less than the limitations imposed by second breakdown. use of reverse biased safe operating area data (fig. 2) is discussed in the applications information section. 2 fig. 4 typical thermal response [z jc (t)] 0.01 0.2 transient thermal resistance (normalized), r(t) time, t (ms) 1 0.05 0.3 0.01 0.02 0.2 0.7 0.07 0.1 0.5 0.1 d = 0.5 0.05 0.05 5 0.5 1 0.03 0.02 0.1 0.2 10 20 50 100 200 500 1.0k single pulse 0.02 0.01 t 2 t 1 duty cycle, d = t 1 /t 2 p (pk) z jc(t) = r(t) jc jc = 1.25c/w max d curves apply for power pulse train shown read time at t 1 t j(pk) ? t c = p (pk) z jc(t)
MJE13009-P npn silicon transistor unisonic technologies co., ltd 8 of 9 www.unisonic.com.tw qw-r223-008, a ? typical characteristics (cont.) dc current gain, h fe collector-emitter voltage, v ce (v) +0.6 fig. 9 collector cutoff region 0.1 100 collector current, i c (ma) base?emitter voltage, v be (v) 1k -0.4 -0.2 +0.2 10 0 +0.4 10k 1 500 fig. 10 capacitance 40 600 capacitance, c (pf) 200 200 1k 0.1 0.2 400 5 2k 22050 10 4k 80 t j = 150c 100 0.5 reverse voltage, v r (v) 25c v ce = 250v 125c 100c 50c 75c forward reverse 1 800 100 60 c ib t j = 25c c ob
MJE13009-P npn silicon transistor unisonic technologies co., ltd 9 of 9 www.unisonic.com.tw qw-r223-008, a resistive switching performance utc assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all utc products described or contained herein. utc products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice.
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